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Same model may have multiple batches, images only for reference.
2SC2383-Y(T6DNS,FM Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SC2383-Y(T6DNS,FM

Part No 2SC2383-Y(T6DNS,FM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 1A 160V TO226-3
Datasheet
2SC2383-Y(T6DNS,FM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 1.5V @ 50mA, 500mA
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 60 @ 200mA, 5V
Maximum Power Dissipation 900mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 1027097-2SC2383-Y(T6DNS,FM
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SC2383-Y(T6DNS,FM CAD Model

Description

Toshiba Semiconductor and Storage's 2SC2383-Y(T6DNS,FM) is a popular electronic component that is widely used in various applications.

  • Transistor Type: NPN
  • Maximum Power Dissipation: 900mW
  • Collector Cut-off Current: 1μA
  • Typical Gain: 60 @ 200mA and 5V
  • Ideal for: Audio amplifiers, power supplies, and switching regulators
  • Mounting: Through-hole
  • Package: TO-92MOD
  • Supply and Demand Status: Sufficient

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