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Same model may have multiple batches, images only for reference.
2SC3326-A(TE85L,F)
Same model may have multiple batches, images only for reference.

2SC3326-A(TE85L,F)

Part No 2SC3326-A(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans Gp Bjt NPN 20V 0.3A 3-PIN TO-236 T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SC
Collector Base Voltage (VCBO) 50 V
Collector Emitter Breakdown Voltage 20 V
Collector Emitter Saturation Voltage 42 mV
Collector Emitter Voltage (VCEO) 20 V
Element Configuration Single
Emitter Base Voltage (VEBO) 25 V
Frequency 30 MHz
Gain Bandwidth Product 30 MHz
Height 1.1 mm
hFE Min 200
Length 2.9 mm
Max Breakdown Voltage 20 V
Max Collector Current 300 mA
Maximum Operating Temperature 125 °C
Max Power Dissipation 150 mW
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Polarity NPN
Power Dissipation 150 mW
Radiation Hardening No
RoHS Compliant
Transition Frequency 30 MHz
Width 1.5 mm
Win Source Part Number 1037037-2SC3326-A(TE85L,F)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC3326-A(TE85L,F) CAD Model

Description

This NPN transistor is manufactured by Toshiba Semiconductor and Storage and has a frequency of 30 MHz.

  • Frequency: 30 MHz
  • Power Dissipation: 150 mW
  • Mounting Package: SMD (SMT)
  • Gain Bandwidth Product: 30 MHz
  • Pins: 3
  • RoHS Compliant: Yes
  • Maximum Operating Temperature: 125 °C
  • Collector Emitter Voltage (VCEO): 20 V
  • Maximum Collector Current: 300 mA
  • Category: RF transistors(BJT)
  • Series: SC

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