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2SC3346

Part No 2SC3346
Manufacturer Toshiba Semiconductor and Storage
Catalog Hard To Find
Description SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1125401-2SC3346
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC3346 CAD Model

Description

The 2SC3346 is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for high-frequency amplification and oscillation applications.

Applications:

  • RF Amplifiers: Used in radio frequency amplifier circuits.
  • Oscillators: Employed in oscillator circuits for generating signals.
  • Mixers: Found in mixer stages of communication equipment.
  • High-Frequency Applications: Suitable for various high-frequency circuit designs.

Features:

  • NPN Epitaxial Planar Transistor: Silicon NPN type transistor with epitaxial planar structure.
  • High Transition Frequency (fT): Offers a high transition frequency for high-frequency performance.
  • Low Noise Figure: Designed for low-noise amplification in sensitive applications.
  • High Power Gain: Provides substantial power gain in amplifier circuits.
  • Small Signal Amplifier: Optimized for amplifying small signals with minimal distortion.

Benefits:

  • Excellent High-Frequency Performance: Enables efficient operation in high-frequency circuits.
  • Low Noise Amplification: Minimizes noise for clear signal amplification.
  • Reliable Signal Generation: Provides stable and consistent signal generation in oscillator applications.
  • Compact Design: Suitable for compact and space-sensitive electronic devices.
  • Wide Range of Applications: Versatile for use in diverse RF and high-frequency applications.

Additional Details:

The 2SC3346 transistor features a collector-emitter voltage (VCEO) of 12V, a collector current (IC) of 50mA, and a power dissipation (PC) of 200mW. Its high transition frequency (fT) typically exceeds 6.5 GHz, making it ideal for high-frequency applications. The device is available in a small surface-mount package, facilitating easy integration into modern electronic circuits. Its low noise figure ensures that the amplified signal remains clean and free from unwanted noise, crucial for sensitive receiver applications. The transistor is manufactured using Toshiba's advanced semiconductor technology, ensuring high reliability and consistent performance.

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