The 2SC4666-B(TE85L,F) is an NPN epitaxial silicon RF transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for low-noise amplification in VHF and UHF applications.

Applications

• VHF/UHF low noise amplifiers
• Oscillators
• Mixers in communication equipment
• High-frequency applications up to its maximum frequency rating

Features

• Low noise figure: Enables amplification of weak signals with minimal added noise.
• High gain: Provides significant signal amplification.
• High fT (transition frequency): Allows for operation at high frequencies.
• Epitaxial silicon structure: Offers superior performance and reliability.
• Small package: Allows for compact circuit designs.

Benefits

• Improved receiver sensitivity: Due to its low noise figure, it enhances the ability of a receiver to detect weak signals.
• Increased signal strength: High gain ensures robust signal amplification.
• Stable operation at high frequencies: High fT guarantees reliable performance in high-frequency circuits.
• Compact design possibilities: Small package enables miniaturization of electronic devices.
• Extended lifespan and reliability: The epitaxial silicon structure ensures long-term stable performance.

Additional Details

The 2SC4666-B(TE85L,F) features a collector-emitter voltage (VCEO) and collector current (IC) that are important considerations for circuit design. The transition frequency (fT) is a key parameter indicating the frequency at which the transistor's current gain drops to unity. The noise figure (NF) is a crucial specification, especially for low-noise amplifier applications. It is typically surface-mounted for automated assembly. Careful attention must be paid to thermal management to ensure reliable operation within its specified power dissipation limits. The 'B' in the part number usually indicates a specific gain grouping or other electrical characteristic variant. Refer to the datasheet for complete electrical characteristics and application guidelines.