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2SC5088-O(TE85L,F)
Same model may have multiple batches, images only for reference.

2SC5088-O(TE85L,F)

Part No 2SC5088-O(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description TRANS RF NPN 12V 500MHZ USQ
Datasheet
2SC5088-O(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1dB @ 500MHz
Gain 18dB
Maximum Power Dissipation 100mW
Typical Gain (hFE) (Min) 80 @ 20mA, 10V
Maximum Current Collector 80mA
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package USQ
Win Source Part Number 1004442-2SC5088-O(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC5088-O(TE85L,F) CAD Model

Description

Toshiba Semiconductor and Storage's USQ is a high-frequency NPN transistor with a gain of 18dB and a transition frequency of 7GHz.

  • Frequency Transition: 7GHz
  • Gain: 18dB
  • Noise Figure: 1dB @ 500MHz
  • Ideal for: RF amplifiers
  • Package: Reel-TR
  • Mounting: SMD (SMT)
  • Maximum Collector Current: 80mA
  • Maximum Collector-Emitter Breakdown Voltage: 12V
  • Typical Gain: 80 @ 20mA and 10V
  • Maximum Power Dissipation: 100mW
  • Category: Discrete Semiconductor Products
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: balanced

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