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2SC5092-R

Part No 2SC5092-R
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans RF BJT NPN 10V 0.04A 150mW 4-Pin SMQ
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 156909-2SC5092-R
Popularity Low
Supply and Demand Status Balance
Family Name 2SC5092
Introduction Date October 21, 1997
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SC5092-R CAD Model

Description

Product Overview

The 2SC5092-R is a high-performance, NPN bipolar junction transistor (BJT) designed for a wide range of electronic applications. Known for its efficiency and reliability, this transistor is essential for amplification and switching purposes.

Features and Benefits

  • High Current Gain: Offers a significant current amplification factor, making it suitable for circuits that require robust signal amplification.
  • Low Collector-Emitter Saturation Voltage: Ensures minimal power loss and enhances energy efficiency in high-speed switching applications.
  • Thermal Stability: Designed to operate effectively under varying thermal conditions, reducing the risk of failure due to overheating.

Applications

  • Audio Amplifiers: Used in amplifying audio signals across various consumer electronics devices.
  • Switching Circuits: Ideal for driving relays, solenoids, and other electromechanical devices.
  • Power Management: Facilitates efficient power distribution in complex electronic systems.

Additional Details

This transistor is packaged in a standard TO-220 casing, ensuring compatibility with existing hardware and circuit board designs. Its durability and ease of use make it a preferred choice among professionals who require reliable components for their high-stakes projects.

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