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2SC5233BTE85LF

Part No 2SC5233BTE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 12V 0.5A USM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Max Vce (sat) 250mV @ 10mA, 200mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 500 @ 10mA, 2V
Maximum Power Dissipation 100mW
Frequency - Transition 130MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 106818-2SC5233BTE85LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC5233BTE85LF CAD Model

Description

Product Overview

The 2SC5233BTE85LF is a high-performance, silicon NPN epitaxial transistor designed to deliver optimal results in a variety of applications. Known for its reliability and robust construction, this transistor is ideal for enthusiasts and professionals in the electronics field.

Applications

  • Audio Amplifiers
  • Switching Regulators
  • Power Management Solutions
  • Motor Drivers
  • Signal Processing

Features and Benefits

  • High Current Gain: Ensures efficient current amplification.
  • Low Collector-Emitter Saturation Voltage: Reduces power loss and enhances efficiency.
  • Robust Design: Offers excellent thermal and electrical characteristics for critical applications.
  • High-Speed Switching: Suitable for high-frequency applications.
  • Reliability: Manufactured to meet strict quality standards, ensuring long-term and consistent performance.

Additional Details

The 2SC5233BTE85LF transistor offers innovative design features that make it invaluable in high-demand environments. With a strong focus on enhancing power efficiency and amplification reliability, this component is ideal for both commercial and industrial applications. Its structure supports advanced circuit designs and the reliable switching required in modern electronics.

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