The 2SC5549 is a silicon NPN epitaxial planar transistor from Toshiba Semiconductor and Storage. It is designed for high-frequency amplification applications.

Applications

• High-frequency amplifiers
• Oscillators
• Mixers
• RF front-end circuits
• Communication equipment

Features

• High transition frequency (fT)
• Low noise figure
• High gain
• Excellent linearity
• Small package size

Benefits

• Enables high-performance amplification in RF circuits.
• Reduces noise in sensitive receiver applications.
• Provides sufficient signal amplification for various applications.
• Ensures accurate signal reproduction in amplifier circuits.
• Facilitates compact design of electronic devices.

Technical Specifications

The 2SC5549 typically features a collector-emitter voltage (VCEO) of 15V, a collector current (IC) of 50mA, and a transition frequency (fT) of 7 GHz. The noise figure is typically 1.5dB at 1 GHz. The package is a small surface-mount type.

Absolute Maximum Ratings: Collector-Base Voltage (VCBO): 20 V, Collector-Emitter Voltage (VCEO): 15 V, Emitter-Base Voltage (VEBO): 3 V, Collector Current (IC): 50 mA, Collector Power Dissipation (PC): 200 mW, Junction Temperature (Tj): 150 °C, Storage Temperature Range (Tstg): -55 to 150 °C.

This transistor is commonly used in communication devices, such as mobile phones and wireless LAN equipment, where high-frequency amplification and low noise performance are critical. Its small size and high performance make it a suitable choice for modern electronic designs.