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Same model may have multiple batches, images only for reference.
2SC5703(TE85L,F)
Same model may have multiple batches, images only for reference.

2SC5703(TE85L,F)

Part No 2SC5703(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Bipolar Transistor single NPN 80V 4A, TSM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Base Voltage (VCBO) 100 V
Collector Emitter Voltage (VCEO) 50 V
Emitter Base Voltage (VEBO) 7 V
Max Collector Current 4 A
Max Operating Temperature 150 °C
Max Power Dissipation 800 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Packaging Tape & Reel
Polarity NPN
Power Dissipation 800 mW
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1214277-2SC5703(TE85L,F)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SC5703(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 2SC5703(TE85L,F) is a surface mount NPN RF transistor with a power dissipation of 800 mW.

  • Type: NPN RF Transistor
  • Mounting: Surface Mount
  • Power Dissipation: 800 mW
  • Number of Pins: 3
  • Collector Base Voltage (VCBO): 100 V
  • Collector Emitter Voltage (VCEO): 50 V
  • Emitter Base Voltage (VEBO): 7 V
  • Max Collector Current: 4 A
  • Supply and Demand Status: Limited
  • Description: Reliable component for electronic devices

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