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Same model may have multiple batches, images only for reference.
2SC6139,T2F(M
Same model may have multiple batches, images only for reference.

2SC6139,T2F(M

Part No 2SC6139,T2F(M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Bipolar (BJT) Transistor NPN 160 V 1.5 A 100MHz 1 W Through Hole MSTM
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mfr Toshiba Semiconductor and Storage
Packaging Bulk
Part Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 160 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 5V
Power - Max 1 W
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case SC-71
Supplier Device Package MSTM
Base Product Number 2SC6139
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1478934-2SC6139,T2F(M
Ultra Librarian 3D Model Ultra Librarian 2SC6139,T2F(M CAD Model

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