The 2SC752Y is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for use in low-noise amplifier applications, particularly in the VHF band. It is known for its excellent low-noise characteristics, high gain, and high cutoff frequency, making it suitable for use in sensitive receiver front-end amplifiers and other high-performance RF circuits.

Applications

• VHF Amplifiers: Used in very high frequency amplifiers for radio communication.
• Low Noise Amplifiers (LNA): Ideal for use in LNA circuits to amplify weak signals with minimal added noise.
• RF Front-End Amplifiers: Used as a first-stage amplifier in radio frequency receivers to improve sensitivity.
• Oscillators: Can be used in oscillator circuits for signal generation.
• Mixers: Suitable for use in mixer circuits for frequency conversion.
• Radio Receivers: Employed in radio receiver circuits to amplify incoming signals.

Features

• NPN Epitaxial Planar Transistor: Silicon NPN transistor with an epitaxial planar structure for high performance.
• High Transition Frequency (fT): High fT value allows for operation at high frequencies.
• Low Noise Figure: Minimizes added noise in amplifier applications.
• High Gain: Provides significant signal amplification.
• Small Signal Amplifier: Designed for amplifying small signals with precision.
• TO-92 Package: Available in a through-hole TO-92 package for easy breadboarding and prototyping.
• Pb-Free Lead Finish: Compliant with RoHS standards, ensuring environmental friendliness.

Benefits

• Enhanced Signal Sensitivity: Low noise figure improves receiver sensitivity, allowing for the detection of weaker signals.
• Improved Signal Quality: High gain ensures strong signal amplification with minimal distortion.
• High-Frequency Performance: Suitable for use in high-frequency applications, such as VHF circuits.
• Easy to Use: Through-hole TO-92 package simplifies assembly and experimentation.
• Reliable Operation: High-quality manufacturing ensures stable and reliable performance.
• Versatile Applications: Suitable for a wide range of amplifier and RF circuit designs.

Additional Details

The 2SC752Y typically operates with a collector-emitter voltage (VCEO) and collector current (IC) within specified ranges. Its transition frequency (fT) is a key parameter indicating its high-frequency capability. The low noise figure is crucial for sensitive receiver applications. The transistor's small signal characteristics are optimized for linear amplification. Toshiba provides detailed datasheets with comprehensive electrical characteristics and performance curves to aid in circuit design. The device is designed to be compatible with standard through-hole assembly processes.