The 2SC980A is a silicon NPN epitaxial planar transistor produced by Toshiba Semiconductor and Storage. It is designed for high-frequency power amplification applications. This transistor is commonly used in radio frequency (RF) amplifiers and oscillator circuits where high gain and low noise are essential.

Applications:

• RF Amplifiers
• Oscillator Circuits
• Mixer Circuits
• High-Frequency Power Amplification
• VHF/UHF Communication Equipment

Features:

• NPN Silicon Epitaxial Planar Transistor
• High Transition Frequency (fT)
• Low Noise Figure
• High Power Gain
• Excellent Linearity

Benefits:

• Enables high-performance RF amplifier designs.
• Provides stable operation in high-frequency circuits.
• Facilitates efficient power amplification.
• Minimizes signal distortion due to excellent linearity.
• Reduces overall system noise, improving signal quality.

Technical Specifications:

Collector-Base Voltage (VCBO): 30V
Collector-Emitter Voltage (VCEO): 20V
Emitter-Base Voltage (VEBO): 3V
Collector Current (IC): 50mA
Collector Dissipation (PC): 200mW
Transition Frequency (fT): 700MHz (Typical)
Operating Temperature Range: -55°C to +150°C

The 2SC980A is typically supplied in a small signal package, such as a SOT-23 or similar. It's important to consult the official Toshiba datasheet for the most accurate and up-to-date specifications and recommended operating conditions. Proper heat sinking may be required depending on the application and power levels involved. This transistor has been a popular choice for RF designers seeking a reliable and cost-effective solution for their amplification needs.