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2SJ465(TE12L,F)

Part No 2SJ465(TE12L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH Si 16V 2A 4-Pin(3+Tab) PW-Mini T/R
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Rohs State rohs
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RoHS Compliant
Win Source Part Number 1179352-2SJ465(TE12L,F)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SJ465(TE12L,F) CAD Model

Description

The 2SJ465(TE12L,F) is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. This MOSFET is designed for switching applications and power management circuits. It is known for its low on-resistance and high-speed switching capabilities.

Applications

  • DC-DC converters
  • Load switches
  • Power management circuits
  • Motor control

Features

  • Low on-resistance (RDS(on))
  • High-speed switching
  • Low gate charge
  • Avalanche rated

Benefits

  • Improved efficiency in power conversion due to low on-resistance.
  • Reduced switching losses due to fast switching speed.
  • Simplified gate drive requirements due to low gate charge.
  • Increased robustness in inductive load applications due to avalanche rating.

Additional Details

The 2SJ465 typically comes in a surface-mount package for efficient heat dissipation. It is important to consult the datasheet for specific values of on-resistance, gate charge, and breakdown voltage. Proper gate drive circuitry and thermal management are essential for optimal performance and reliability. The MOSFET is designed to minimize conduction losses and switching losses, making it a good choice for high-efficiency power supplies and motor control applications.

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