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2SJ668(TE16L1,NQ)

Part No 2SJ668(TE16L1,NQ)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 5A PW-MOLD
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 700pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 170 mOhm @ 2.5A, 10V
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Case / Package PW-MOLD
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 158836-2SJ668(TE16L1,NQ)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SJ668(TE16L1,NQ) CAD Model

Description

Product Overview

The 2SJ668(TE16L1,NQ) is an advanced version of the 2SJ668 MOSFET, specifically designed for enhanced performance parameters to meet the highest industry standards. Its innovative features and design make it suitable for applications where precision and reliability are crucial, addressing key factors in modern electronic circuits.

Features and Benefits

  • Optimized for ultra-fast switching applications.
  • Reduced on-state resistance (RDS(on)) for better efficiency.
  • High endurance against thermal cycles.
  • Miniature profile for integration into compact systems.

Applications

  • Advanced robotics
  • High-performance computing
  • Renewable energy applications
  • Electric vehicle systems

Additional Details

Incorporating the latest semiconductor technologies, the 2SJ668(TE16L1,NQ) MOSFET provides improved electrical characteristics, such as lower leakage currents and enhanced avalanche energy capability. It is adept at full-load conditions, supporting the rigorous demands of today's electronic innovations. This MOSFET is a testament to advanced engineering, providing solutions that adapt seamlessly to emerging technology trends.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2613 $63.0650
115+ $1.0349 $119.0135
175+ $1.0025 $175.4375
240+ $0.9702 $232.8480
310+ $0.9379 $290.7490
415+ $0.8408 $348.9320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,590 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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