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2SK1120

Part No 2SK1120
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) / Trans MOSFET N-CH Si 1KV 8A 3-Pin(3+Tab) TO-3PN
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 158893-2SK1120
Popularity Medium
Supply and Demand Status Limited
Family Name 2SK1120
Introduction Date July 24, 1998
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK1120 CAD Model

Description

Product Overview: 2SK1120

The 2SK1120 is a highly efficient N-channel MOSFET, renowned for its quick switching capabilities and robust design. This component is specifically crafted to meet the requirements of advanced electronic applications where performance and reliability are of utmost importance.

Applications

  • High-frequency amplifiers
  • Switching regulators
  • Drive circuits for piezoelectric elements
  • Electronic ballasts
  • Solar inverter systems

Features and Benefits

  • Fast Recovery Time: Supports applications that necessitate quick switching.
  • High Voltage Tolerance: Suitable for high-voltage applications.
  • Efficient Thermal Dissipation: Enhances device longevity by mitigating thermal accumulation.
  • Compact and Durable: Ideal for space-sensitive and robust designs.

Additional Details

The 2SK1120 embodies precision engineering, allowing it to excel in challenging environments. With its short recovery time and high voltage tolerance, this MOSFET addresses the needs of modern electronic devices that operate under strict parameters. Its compact footprint does not compromise its ability to manage significant power loads, making it a versatile choice for a wide array of applications.

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