The Toshiba Semiconductor and Storage 2SK2233(F) is a transistor-FET with MOSFETs-RF category.

• Category: Transistor-FET with MOSFETs-RF
• Drain to Source Voltage (Vdss): 60 V
• Input Capacitance: 1.8 nF
• Number of Pins: 3
• Rise Time: 20 ns
• Fall Time: 40 ns
• Alternative Parts (Cross-Reference): NDP6060, IRFZ44EPBF, IRFZ44PBF, RFP50N06, IRFZ44RPBF, FQP50N06L
• Supply and Demand Status: Shortage
• Maximum Operating Temperature: 150 °C
• Lead: Free
• Mount: Through hole
• RoHS: Compliant
• Radiation Hardening: Not available
• Minimum Operating Temperature: -55 °C
• Max Power Dissipation: 100 W
• Continuous Drain Current (ID): 45 A
• Gate to Source Voltage (Vgs): 20 V
• Rds On Max: 30 mΩ