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Same model may have multiple batches, images only for reference.
2SK2776(TE24L)
Same model may have multiple batches, images only for reference.

2SK2776(TE24L)

Part No 2SK2776(TE24L)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet N-ch 500V 8A TO220SM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-252-3
Continuous Drain Current (ID) 8 A
Current Rating 8 A
Drain to Source Voltage (Vdss) 500 V
Fall Time 40 ns
Gate to Source Voltage (Vgs) 30 V
Input Capacitance 1.3 nF
Lead Free Yes
Maximum Operating Temperature 150 °C
Max Power Dissipation 65 W
Min Operating Temperature -55 °C
Mount Surface Mount, Through Hole
Number of Pins 3
Packaging Tape & Reel (TR)
Radiation Hardening No
Rds On Max 850 mΩ
Rise Time 26 ns
RoHS Compliant
Voltage Rating (DC) 500 V
Win Source Part Number 1016922-2SK2776(TE24L)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK2776(TE24L) CAD Model

Description

The Toshiba Semiconductor and Storage 2SK2776(TE24L) is a MOSFET transistor designed for use in high voltage applications.

  • Drain to source voltage (Vdss): 500 V
  • Continuous drain current (ID): 8 A
  • Mounting: surface mountable
  • Package: TO-252-3
  • Input capacitance: 1.3 nF
  • Rise time: 26 ns
  • RoHS compliance: lead-free and RoHS compliant

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