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2SK2845(TE16L1,Q)

Part No 2SK2845(TE16L1,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 1A DP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 9 Ohm @ 500mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DP
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 197595-2SK2845(TE16L1,Q)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK2845(TE16L1,Q) CAD Model

Description

The 2SK2845(TE16L1,Q) is a high-performance MOSFET transistor, renowned for its efficiency and reliability in various electronics applications. This electronic component is instrumental in boosting power efficiency and effectiveness in circuitry, making it a sought-after choice for electronics engineers and hobbyists alike.

Applications

  • Switching Power Supply
  • UPS Systems
  • DC-DC Converters
  • Motor Drives
  • Battery Management Systems

Features and Benefits

  • High-Speed Switching: Designed for rapid switching applications, improving overall system throughput.
  • Low On-Resistance: Minimizes energy loss and enhances device efficiency.
  • Thermal Stability: Ensures optimal performance across a wide temperature range.
  • Compact Design: Facilitates easier integration into high-density circuit boards.
  • Reliable Performance: Manufactured to provide long-lasting service even under rigorous conditions.

The 2SK2845(TE16L1,Q) is constructed to handle demanding operations while maintaining a balance between power and heat dissipation. This particular model is favored in the design of advanced power management systems where efficiency and size are critical.

Furthermore, it offers robust thermal capabilities that allow it to maintain functionality over a wide temperature range, ensuring that devices operate smoothly without overheating. Due to its ability to handle high-speed switching efficiently, this MOSFET transistor is integral in producing low noise and high-performance outputs, suitable for both commercial and industrial applications.

Incorporating this MOSFET into your projects will not only provide reliable performance but also enhance the overall efficiency of your electronic projects. The 2SK2845(TE16L1,Q) stands as a testament to modern advancements in semiconductor technology, offering trustworthy solutions for complex electronic challenges.

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