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2SK3868(Q,M)

Part No 2SK3868(Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
Power Dissipation (Max) 35W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number 2SK3868
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1314984-2SK3868(Q,M)
Ultra Librarian 3D Model Ultra Librarian 2SK3868(Q,M) CAD Model

Description

The 1314984-2SK3868(Q,M) is a MOSFET (Metal Oxide) transistor that features an N-Channel FET type and a drain to source voltage of 500V.

  • FET Type: N-Channel
  • Drain to Source Voltage: 500V
  • Continuous Drain Current: 5A (Ta)
  • Rds On: 1.7Ohm @ 2.5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
  • Vgs (Max): ±30V
  • Operating Temperature: 150°C (TJ)
  • Package: TO-220-3 Full Pack
  • Supplier Device Package: TO-220SIS
  • Manufacturer: Toshiba Semiconductor and Storage
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
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Availability: 2,608 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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