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2SK3878 Toshiba Semiconductor and Storage 2SK3878 label picture 2SK3878 real image
Same model may have multiple batches, images only for reference.
2SK3878 Toshiba Semiconductor and Storage 2SK3878 label picture 2SK3878 real image
2SK3878 Toshiba Semiconductor and Storage 2SK3878 label picture 2SK3878 real image
Same model may have multiple batches, images only for reference.

2SK3878

Part No 2SK3878
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description Silicon N-Channel MOS Type Switching Regulator Applications / Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-3PN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 160313-2SK3878
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name 2SK3878
Introduction Date January 24, 2005
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian 2SK3878 CAD Model

Description

2SK3878

The 2SK3878 is a high-efficiency N-channel MOSFET that excels in applications requiring high-speed switching and low conduction losses. It is designed to meet the demands of modern electronic devices that prioritize energy conservation.

  • Key Features: High-speed switching, Low conduction losses, High efficiency.
  • Applications: Renewable energy systems, Smart grid technologies, Battery management systems.
  • Benefits: Energy conservation, Enhanced efficiency for sustainable technology solutions.

Refer to the product datasheet for further technical details and implementation guidance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3675 $61.5375
95+ $1.2794 $121.5430
145+ $1.2353 $179.1185
205+ $1.1471 $235.1555
265+ $1.1029 $292.2685
330+ $1.0588 $349.4040
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Availability: 12,000 pieces
MOQ: 45 pcs
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