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Same model may have multiple batches, images only for reference.
2SK4012(Q)
Same model may have multiple batches, images only for reference.

2SK4012(Q)

Part No 2SK4012(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Pw Mosfet, N-cha, 500V, 13A, 0.4 Ohm, TO-220(SIS), Pb-fr
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220-3
Continuous Drain Current (ID) 13 A
Drain to Source Resistance 400 mΩ
Drain to Source Voltage (Vdss) 500 V
Gate to Source Voltage (Vgs) 30 V
Height 8.1 mm
Input Capacitance 2.4 nF
Lead Free Yes
Length 10 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 45 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 45 W
Radiation Hardening No
Rds On Max 400 mΩ
REACH SVHC Unknown
RoHS Compliant
Threshold Voltage 4 V
Width 4.5 mm
Win Source Part Number 973342-2SK4012(Q)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK4012(Q) CAD Model

Description

The Toshiba Semiconductor and Storage 2SK4012(Q) is a single N-channel MOSFET transistor with a drain-to-source voltage of 500 V and a continuous drain current of 13 A.

  • Drain-to-Source Voltage: 500 V
  • Continuous Drain Current: 13 A
  • Input Capacitance: 2.4 nF
  • Package: TO-220-3
  • Power Dissipation (Max): 45 W
  • Lead-Free: Yes
  • RoHS Compliant: Yes
  • Supply and Demand Status: Shortage

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