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Same model may have multiple batches, images only for reference.
2SK4112 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SK4112

Part No 2SK4112
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET N-CH Si 600V 10A 3-Pin(3+Tab) TO-220NIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 160442-2SK4112
Popularity Low
Supply and Demand Status Balance
Family Name 2SK4112
Introduction Date September 29, 2009
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK4112 CAD Model

Description

Product Overview

The 2SK4112 is a high-performance N-channel MOSFET specifically designed for high-speed switching applications. With its advanced technology, the 2SK4112 offers superior efficiency and is ideal for use in electronic systems that require fast and reliable power conversion.

Features and Benefits

  • Low on-state resistance for efficient power management
  • High-speed switching capability
  • Robust design suitable for high-performance applications
  • Low gate charge to improve efficiency

Applications

  • Power supply units
  • Motor control systems
  • Battery management systems
  • DC-DC converters

With its versatile capabilities, the 2SK4112 provides dependable performance in various electronic projects, enhancing the efficiency and reliability of the systems it powers.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4909 $51.5445
250+ $0.4028 $100.7000
385+ $0.3903 $150.2655
530+ $0.3777 $200.1810
685+ $0.3651 $250.0935
920+ $0.3273 $301.1160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,455 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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