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2SK578

Part No 2SK578
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 991399-2SK578
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK578 CAD Model

Description

The 2SK578 is an N-channel Junction Field Effect Transistor (JFET) designed for RF amplifier applications, manufactured by Toshiba Semiconductor and Storage. JFETs are voltage-controlled devices that offer high input impedance and low noise characteristics, making them suitable for sensitive RF signal amplification.

Applications:

  • RF Amplifiers: Used in radio frequency amplifier circuits to boost weak signals.
  • Mixers: Used in RF mixers to combine signals of different frequencies.
  • Oscillators: Used in oscillator circuits to generate stable RF signals.
  • Front-End Amplifiers: Used in radio receivers as a low-noise amplifier to boost weak received signals.
  • High Impedance Amplifiers: Suitable for applications requiring high input impedance, such as sensor amplifiers.

Features:

  • N-Channel JFET: Offers high input impedance and low noise characteristics.
  • High Gain: Provides high gain for amplifying weak signals.
  • Low Noise Figure: Minimizes noise contribution in sensitive RF applications.
  • High Input Impedance: Reduces loading effects on signal sources.
  • Small Signal Amplifier: Designed for small signal amplification in RF and analog circuits.

Benefits:

  • Improved Signal Sensitivity: Amplifies weak signals with minimal added noise.
  • Enhanced RF Performance: Provides stable and reliable amplification in RF circuits.
  • Reduced Signal Loading: High input impedance minimizes loading effects on signal sources.
  • Stable Operation: Offers stable performance over a range of operating conditions.
  • Reliable Performance: Manufactured by Toshiba, ensuring high quality and reliability.

Additional Details:

The 2SK578 is typically packaged in a small through-hole or surface-mount package. Specific electrical characteristics include transconductance (gm), drain current (IDSS), gate-source cutoff voltage (VGS(off)), and input capacitance (Ciss). The datasheet should be consulted for precise specifications and application guidelines. It is designed for low-power applications and often used in communication equipment and instrumentation. It is RoHS compliant.

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