The C2235 is an NPN epitaxial silicon transistor manufactured by Toshiba Semiconductor and Storage. It is primarily designed for use in high-frequency amplifier applications, particularly in VHF and UHF bands. This transistor is commonly found in radio frequency (RF) circuits, oscillator circuits, and mixer stages in various communication devices.
Applications:
- RF Amplifiers (VHF/UHF)
- Oscillators
- Mixers
- High-Frequency Communication Equipment
- Signal Processing Circuits
Features:
- NPN Epitaxial Silicon Transistor
- High Transition Frequency (fT)
- Low Noise Figure
- High Power Gain
- Small Signal Amplifier
Benefits:
- Enables efficient amplification in high-frequency applications.
- Improves signal-to-noise ratio due to its low noise figure.
- Provides good power amplification for reliable signal transmission.
- Suitable for use in various RF circuit designs due to its versatile characteristics.
- Facilitates compact design in communication devices.
Additional Details:
Key electrical characteristics of the C2235 include a collector-emitter voltage (VCEO) of around 20V, a collector current (IC) of 50mA, and a power dissipation (PC) of 200mW. The transition frequency (fT) typically exceeds 1 GHz, making it suitable for high-frequency applications. Its low noise figure ensures minimal signal degradation in sensitive receiver circuits.
It is packaged in a small signal package, allowing for compact circuit designs. The transistor’s characteristics are optimized for performance in VHF and UHF bands, offering high gain and low distortion.
When using the C2235, it's crucial to ensure proper biasing and impedance matching to achieve optimal performance. The transistor's parameters are sensitive to variations in operating conditions, so careful circuit design is essential.
Although this part is listed as End-of-Life, equivalent or replacement parts might be available from various manufacturers. Always verify the specifications and characteristics of replacement parts to ensure compatibility with the original design.