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Same model may have multiple batches, images only for reference.
GT50N322A Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

GT50N322A

Part No GT50N322A
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description PB-F IGBT / TRANSISTOR TO-3PN IC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Toshiba Semiconductor and Storage
Package Tray
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 1000 V
Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
Power - Max 156 W
Input Type Standard
Reverse Recovery Time (trr) 800 ns
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Standard Package 50 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 139247-GT50N322A
Ultra Librarian 3D Model Ultra Librarian GT50N322A CAD Model

Description

The 139247-GT50N322A is a high-power single IGBT transistor in the Discrete Semiconductor Products category. It has a maximum power rating of 156 W and a voltage breakdown of 1000 V.

  • Maximum Collector Current: 50 A
  • Pulsed Collector Current: 120 A
  • Vce(on): 2.8V @ 15V, 60A
  • Mounting Type: Through Hole
  • Package: TO-3P-3, SC-65-3
  • Manufacturer: Toshiba Semiconductor and Storage
  • Status: Active

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45+ $2.2235 $100.0575
70+ $2.1540 $150.7800
96+ $2.0845 $200.1120
125+ $2.0150 $251.8750
167+ $1.8066 $301.7022
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Availability: 7,000 pieces
MOQ: 19 pcs
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