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HN1B01FU-GR,LF

Part No HN1B01FU-GR,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 50V 0.15A US6-PLN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 6V
Maximum Power Dissipation 200mW, 210mW
Frequency - Transition 150MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 001676-HN1B01FU-GR,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HN1B01FU-GR,LF CAD Model

Description

The HN1B01FU-GR,LF is a high-frequency transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in a wide range of applications, including wireless communication, digital consumer electronics, and automotive systems. The HN1B01FU-GR,LF is a medium-popularity item and is in sufficient supply. However, there is a 60% threat of fake products in the open market. It has a maximum power dissipation of 200mW and 210mW, with a maximum current collector of 150mA. Contact us for more information.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.9630 $59.5560
29+ $4.0725 $118.1025
44+ $3.9443 $173.5492
61+ $3.8173 $232.8553
79+ $3.6902 $291.5258
105+ $3.3091 $347.4555
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,300 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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