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HN1B01FU-Y(L,F,T)

Part No HN1B01FU-Y(L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 50V 0.15A US6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 300mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 2mA, 6V
Maximum Power Dissipation 200mW
Frequency - Transition 120MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 001675-HN1B01FU-Y(L,F,T)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HN1B01FU-Y(L,F,T) CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and the Win Source Part Number is 001675-HN1B01FU-Y(L,F,T). It is a NPN, PNP transistor with a maximum collector-emitter breakdown voltage of 50V. The frequency transition is 120MHz and the temperature range for operating is 125°C (TJ). The packaging is Reel - TR and the mounting is SMD (SMT). The popularity of this product is medium and there is a moderate risk of fake products in the open market. The supply and demand status is sufficient.

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Pricing & Ordering

Quantity Unit Price Ext. Price
570+ $0.1016 $57.9120
1,390+ $0.0832 $115.6480
2,145+ $0.0809 $173.5305
2,945+ $0.0785 $231.1825
3,850+ $0.0751 $289.1350
5,085+ $0.0681 $346.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,000 pieces
MOQ: 570 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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