The Toshiba Semiconductor and Storage HN1B04F(TE85L,F) is a surface mount transistor with a frequency transition of 200MHz. It has an NPN, PNP transistor polarity and a maximum current collector of 500mA. The VCEO maximum collector-emitter breakdown voltage is 30V, and the max Vce (sat) is 250mV @ 10mA, 100mA. The collector cut-off current (Max) is 100nA (ICBO), and the typical gain (hFE) (Min) is 70 @ 100mA, 1V. The maximum power dissipation is 300mW, and the temperature range of this transistor is 150°C (TJ). This transistor has a SM6 case/package, and it is obsolete (EOL). The supply and demand status is balanced.