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Same model may have multiple batches, images only for reference.
HN1C01FYTE85LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

HN1C01FYTE85LF

Part No HN1C01FYTE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 50V 0.15A SM6
Datasheet
HN1C01FYTE85LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 2mA, 6V
Maximum Power Dissipation 300mW
Frequency - Transition 80MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package SM6
Win Source Part Number 001688-HN1C01FYTE85LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HN1C01FYTE85LF CAD Model

Description

The Toshiba Semiconductor and Storage transistor, with the part number 001688-HN1C01FYTE85LF, is an active discrete semiconductor product. This product is a dual NPN transistor array that operates at a frequency of 80MHz. The product is suitable for various electronic applications, and its popularity is medium. The product has a maximum collector-emitter breakdown voltage of 50V and a maximum power dissipation of 300mW.

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Pricing & Ordering

Quantity Unit Price Ext. Price
445+ $0.1126 $50.1070
1,085+ $0.0924 $100.2540
1,675+ $0.0896 $150.0800
2,310+ $0.0867 $200.2770
2,985+ $0.0838 $250.1430
3,995+ $0.0751 $300.0245
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 445 pcs
Order Increment : 1 pcs
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