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Same model may have multiple batches, images only for reference.
HN1C03F-B(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

HN1C03F-B(TE85L,F)

Part No HN1C03F-B(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 20V 0.3A SM6
Datasheet
HN1C03F-B(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 300mA
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Max Vce (sat) 100mV @ 3mA, 30mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 350 @ 4mA, 2V
Maximum Power Dissipation 300mW
Frequency - Transition 30MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SM6
Win Source Part Number 001689-HN1C03F-B(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HN1C03F-B(TE85L,F) CAD Model

Description

The Toshiba HN1C03F-B(TE85L,F) is a dual NPN transistor that is designed for use in various applications. It has a frequency transition of 30MHz and a maximum collector-emitter breakdown voltage of 20V. The HN1C03F-B(TE85L,F) has a maximum current collector of 300mA and a maximum power dissipation of 300mW. It has a typical gain (hFE) of 350 at 4mA and 2V. This transistor is RoHS compliant and has a medium popularity rating. It is currently an active component with sufficient supply and demand.

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