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HN1C03FU-B(TE85L,F)

Part No HN1C03FU-B(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 20V 0.3A US6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 300mA
Voltage - Collector Emitter Breakdown (Max) 20V
Vce Saturation (Max) @ Ib, Ic 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 4mA, 2V
Power - Max 200mW
Frequency - Transition 30MHz
Mounting Style SMD/SMT
Package 6-TSSOP, SC-88, SOT-363
Manufacturer Device Package US6
Win Source Part Number 001691-HN1C03FU-B(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HN1C03FU-B(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage is a high-quality transistor that is designed for a variety of applications.

  • Type: 2 NPN (Dual)
  • Current: Up to 300mA
  • Power: Up to 200mW
  • Voltage Rating: 20V
  • Packaging: Reel
  • Mounting Style: SMD/SMT
  • Temperature Range: -40°C to 85°C
  • Popularity: Medium
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.7928 $58.6488
51+ $2.2915 $116.8665
79+ $2.2199 $175.3721
108+ $2.1483 $232.0164
140+ $2.0767 $290.7380
187+ $1.8619 $348.1753
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,100 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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