The Toshiba Semiconductor and Storage offers the 099573-HN2C01FE-GR(T5L,F) electronic component. It is a dual NPN transistor with a maximum collector-emitter breakdown voltage of 50V and a maximum current collector of 150mA. The transistor has a frequency transition of 60MHz and a typical gain (hFE) of 200 at 2mA, 6V. The maximum power dissipation of the component is 100mW, and it has a collector cut-off current (Max) of 100nA (ICBO). The component is packaged in a reel - TR and mounted using SMD (SMT) technology. The component is categorized as a discrete semiconductor product and is currently obsolete (EOL). The operating temperature range of the component is 150°C (TJ). The component is popular in the market, and there is a 66% threat of fake products in the open market. The supply and demand status of the component is sufficient.