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HN4B04J(TE85L,F)

Part No HN4B04J(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 30V 0.5A SMV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN, PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100μA (ICBO)
Typical Gain (hFE) (Min) 70 @ 100mA, 1V
Maximum Power Dissipation 300mW
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SMV
Win Source Part Number 104116-HN4B04J(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HN4B04J(TE85L,F) CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and has an obsolete status. The Win Source Part Number for this product is 104116-HN4B04J(TE85L,F). The product is categorized as a Discrete Semiconductor Product and has a maximum current collector of 500mA.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.9755 $69.8775
11+ $11.4680 $126.1480
16+ $11.1088 $177.7408
22+ $10.7507 $236.5154
28+ $10.3927 $290.9956
38+ $9.3174 $354.0612
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,300 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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