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Same model may have multiple batches, images only for reference.
K11A55D Real Image
Same model may have multiple batches, images only for reference.

K11A55D

Part No K11A55D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 11A TO-220SIS
Datasheet
K11A55D Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 630 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 070328-K11A55D
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian K11A55D CAD Model

Description

The K11A55D is a MOSFET electronic component manufactured by Toshiba Semiconductor and Storage. It is an N-channel polarity with a maximum power dissipation of 45W @ Tc.

  • Package: TO-220SIS
  • Dimension: TO-220-3 Full Pack
  • Supply and demand status: limited.

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6+ $22.0143 $132.0858
9+ $21.3271 $191.9439
12+ $20.6387 $247.6644
15+ $19.9503 $299.2545
20+ $17.8875 $357.7500
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Availability: 7,200 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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