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Same model may have multiple batches, images only for reference.
K12A50D Real Image
Same model may have multiple batches, images only for reference.

K12A50D

Part No K12A50D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12A TO-220SIS
Datasheet
K12A50D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 520 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 070330-K12A50D
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian K12A50D CAD Model

Description

The Toshiba Semiconductor and Storage K12A50D is a MOSFET that is used for various applications. This component is manufactured by Toshiba Semiconductor and Storage and has a medium popularity in the market.

  • Suitable for: various applications
  • Maximum Power Dissipation: 45W

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