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K13A50DA

Part No K13A50DA
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 14+
Reference case TO-220F
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 738942-K13A50DA
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian K13A50DA CAD Model

Description

The K13A50DA is a high-voltage N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. This MOSFET is designed for high-efficiency switching applications and features a low on-resistance (RDS(on)), which minimizes power losses. The K13A50DA is suitable for a wide range of applications requiring efficient power conversion and control.

Applications:

  • Power supplies: Used in switch-mode power supplies (SMPS) for computers, servers, and consumer electronics.
  • Motor control: Employed in motor drives for industrial automation, electric vehicles, and home appliances.
  • Inverters: Used in solar inverters, UPS systems, and frequency converters.
  • Lighting: Used in electronic ballasts and LED lighting systems.

Features:

  • Low on-resistance (RDS(on)): Minimizes conduction losses, improving overall efficiency.
  • High avalanche energy (EAS): Withstands high energy pulses in avalanche mode, enhancing robustness.
  • Fast switching speed: Enables high-frequency operation, reducing switching losses.
  • High voltage capability: Suitable for high-voltage applications.
  • Lead-free package: Compliant with environmental regulations.

Benefits:

  • High efficiency: Low RDS(on) reduces power losses and improves system efficiency.
  • Reliable operation: High avalanche energy capability ensures reliable operation under transient conditions.
  • Compact design: High power density enables compact and lightweight designs.
  • Reduced heat dissipation: Lower power losses result in reduced heat dissipation, simplifying thermal management.

Additional Details:

The K13A50DA features a drain-source voltage (VDS) rating of 500V and a continuous drain current (ID) rating that depends on the operating temperature and package. The gate-source voltage (VGS) should be carefully controlled to ensure proper operation and prevent damage to the device. The datasheet provides detailed information on the electrical characteristics, thermal resistance, and safe operating area (SOA) of the MOSFET. Designers should refer to the datasheet for specific application guidelines and design considerations.

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