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Same model may have multiple batches, images only for reference.
K15A50D Real Image
Same model may have multiple batches, images only for reference.

K15A50D

Part No K15A50D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 15A TO-220SIS
Datasheet
K15A50D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 2300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 205792-K15A50D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian K15A50D CAD Model

Description

The Toshiba Semiconductor and Storage 205792-K15A50D is an N-Channel MOSFET that offers a drain-source breakdown voltage of 500V and a continuous drain current of 15A @ 25°C. This MOSFET is widely used in various electronic applications such as power supplies, motor control circuits, and switching circuits.

  • Package: TO-220SIS
  • Status: active
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: 2300pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7568 $52.9760
165+ $0.6209 $102.4485
250+ $0.6015 $150.3750
345+ $0.5821 $200.8245
445+ $0.5627 $250.4015
595+ $0.5045 $300.1775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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