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Same model may have multiple batches, images only for reference.
RN1105MFV(TL3,T)
Same model may have multiple batches, images only for reference.

RN1105MFV(TL3,T)

Part No RN1105MFV(TL3,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans NPN Pre-bias 50V Vesm
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-723
Collector Emitter Voltage (VCEO) 50 V
Continuous Collector Current 100 mA
Element Configuration Single
Emitter Base Voltage (VEBO) 5 V
hFE Min 80
Max Collector Current 100 mA
Max Power Dissipation 150 mW
Mount Surface Mount
Number of Pins 3
Polarity NPN
Radiation Hardening No
RoHS Compliant
Win Source Part Number 989588-RN1105MFV(TL3,T)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian RN1105MFV(TL3,T) CAD Model

Description

The electronic component with Id 932967 is a product manufactured by Toshiba Semiconductor and Storage.

  • Type: RF Transistor (BJT)
  • Mounting: Surface Mount
  • Polarity: NPN
  • RoHS Compliant: Yes
  • Configuration: Single Element
  • Popularity: Low
  • Fake Product Threat: 63%
  • Supply and Demand Status: Shortage
  • Collector-Emitter Voltage (VCEO): 50 V
  • Emitter Base Voltage (VEBO): 5 V
  • Maximum Collector Current: 100 mA

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2,145+ $0.0809 $173.5305
2,945+ $0.0785 $231.1825
3,790+ $0.0762 $288.7980
5,085+ $0.0681 $346.2885
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Availability: 206,000 pieces
MOQ: 570 pcs
Order Increment : 1 pcs
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