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RN1106MFV(TL3,T)

Name: RN1106MFV(TL3,T)
Brand: Toshiba Semiconductor and Storage
SKU: 296880
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	RN1106MFV(TL3,T)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS NPN 0.15W VESM
Datasheet	RN1106MFV(TL3,T) Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Obsolete(EOL)
Transistor Polarity	NPN - Pre-Biased
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	4.7k
Resistor - Emitter Base (R2) (Ohms)	47k
Typical Gain (hFE) (Min)	80 @ 10mA, 5V
Max Vce (sat)	300mV @ 500μA, 5mA
Collector Cut-off Current(Max)	500nA
Maximum Power Dissipation	150mW
Mounting	SMD (SMT)
Case / Package	VESM
Win Source Part Number	027445-RN1106MFV(TL3,T)
Popularity	Medium
Supply and Demand Status	Sufficient
Quantity per package	8k pcs
Ultra Librarian 3D Model	Ultra Librarian RN1106MFV(TL3,T) CAD Model

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Description

The Toshiba Semiconductor and Storage RN1106MFV(TL3,T) is a pre-biased NPN transistor with a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA.

Typical Gain (hFE): 80 @ 10mA and 5V
Mounting: SMD (SMT) technology
Package: VESM
Maximum Power Dissipation: 150mW
Usage: discrete semiconductor products
Popularity: medium

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