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Same model may have multiple batches, images only for reference.
RN1110ACT(TPL3) Real Image
Same model may have multiple batches, images only for reference.

RN1110ACT(TPL3)

Part No RN1110ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W CST3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package CST3
Win Source Part Number 102262-RN1110ACT(TPL3)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1110ACT(TPL3) CAD Model

Description

The Toshiba Semiconductor and Storage RN1110ACT(TPL3) is an NPN pre-biased transistor with a maximum collector current of 80mA and a collector-emitter breakdown voltage of 50V.

  • Package: CST3
  • Maximum Power Dissipation: 100mW
  • Typical Gain (hFE): 120 @ 1mA and 5V
  • Maximum Vce (sat): 150mV @ 250μA and 5mA
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Supply and Demand: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9021 $58.6365
160+ $0.7404 $118.4640
245+ $0.7173 $175.7385
335+ $0.6942 $232.5570
435+ $0.6711 $291.9285
580+ $0.6018 $349.0440
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