The RN2911(TE85R) is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage, designed for applications requiring efficient power management and load switching. Its key features include a low on-resistance, enabling minimal power loss, and a high-speed switching capability, making it suitable for use in DC-DC converters and portable devices where space and power efficiency are critical.

Applications

• DC-DC Converters
• Load Switching
• Power Management Circuits
• Portable Devices
• Battery-Powered Equipment

Features

• P-Channel MOSFET
• Low On-Resistance (RDS(on))
• High-Speed Switching
• Surface Mount Device (SMD)
• RoHS Compliant

Benefits

• Enhanced Power Efficiency: Low RDS(on) minimizes power dissipation and heat generation, improving overall energy efficiency.
• Fast and Responsive Switching: High-speed switching capabilities enable efficient load control in dynamic systems.
• Compact Design: The small SMD package allows for integration into space-constrained applications.
• Reliable Performance: Toshiba's quality manufacturing ensures stable and reliable performance.
• Simplified Implementation: Easy to integrate into various power management and switching circuits.

Technical Specifications

The RN2911(TE85R) typically has a drain-source voltage (VDSS) of -30V, a gate-source voltage (VGSS) of ±20V, and a drain current (ID) of -2A. The on-resistance (RDS(on)) is typically around 0.18 ohms at a gate-source voltage of -10V. It's commonly available in a surface mount package such as SOT-23. Specific details are available in the official Toshiba datasheet.