The Toshiba RN1112MFV,L3F is a pre-biased bipolar transistor (BJT) NPN with a pre-biased voltage of 50 V, current of 100 mA, and power of 150 mW. This transistor is surface mountable and comes in a VESM package. It is a part of the RN1112 family and is categorized under Discrete Semiconductor Products. The RN1112MFV,L3F is widely used in various electronic devices that require a pre-biased transistor. The product is available in a reel package of 8000 and has an estimated production lead time of 9 weeks. It is also ECCN EAR99 compliant and has a popularity rating of high in the market.