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RN1301

Part No RN1301
Manufacturer Toshiba Semiconductor and Storage
Description Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1243309-RN1301
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1301 CAD Model

Description

The RN1301 is a silicon N channel MOS type field effect transistor designed for high-speed switching applications. This transistor is part of Toshiba's extensive line of discrete semiconductors, known for their reliability and performance in various electronic circuits.

Applications

  • High-speed switching circuits
  • DC-DC converters
  • Analog switches
  • Load switches
  • Power management circuits

Features

  • Low drain-source on-resistance: This minimizes power loss during switching operations, improving efficiency.
  • Fast switching speed: Enables the transistor to quickly turn on and off, making it suitable for high-frequency applications.
  • Low threshold voltage: Ensures the transistor can be easily turned on with a small gate voltage.
  • Available in a compact package: Allows for efficient use of board space.
  • Enhancement mode: Simplifies the drive circuitry required.

Benefits

  • Improved energy efficiency: The low on-resistance reduces power dissipation, leading to more efficient circuits.
  • Enhanced system performance: Fast switching speeds allow for higher frequency operation and improved overall system responsiveness.
  • Simplified circuit design: The low threshold voltage and enhancement mode operation make it easier to design and implement switching circuits.
  • Compact design: The small package size allows for use in space-constrained applications.
  • Increased reliability: Toshiba's stringent manufacturing processes ensure high reliability and long operating life.

Additional Details

The RN1301 typically comes in a surface-mount package, such as a SOT-23 or similar. Key specifications include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and power dissipation (PD). Consult the datasheet for precise values, as these can vary slightly depending on the specific manufacturing lot and testing conditions. It's crucial to check the maximum ratings in the datasheet to prevent damage to the transistor.

The gate threshold voltage is an important parameter to consider for proper circuit design. The device is RoHS compliant, meaning it is manufactured without hazardous substances, making it environmentally friendly.

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Pricing & Ordering

Quantity Unit Price Ext. Price
430+ $0.1351 $58.0930
1,045+ $0.1109 $115.8905
1,615+ $0.1074 $173.4510
2,225+ $0.1040 $231.4000
2,875+ $0.1005 $288.9375
3,850+ $0.0901 $346.8850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 92,000 pieces
MOQ: 430 pcs
Order Increment : 1 pcs
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