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Same model may have multiple batches, images only for reference.
RN1307,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1307,LF

Part No RN1307,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description X34 PB-F USM TRANSISTOR PD 100MW
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) at Ic, Vce 80 at 10mA, 5V
Vce Saturation (Maximum) at Ib, Ic 300mV at 250μA, 5mA
Current - Collector Cutoff (Maximum) 500nA
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Style SMD
Manufacturer Package SC-70, SOT-323
Supplier Device Package USM
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 801341-RN1307,LF
Ultra Librarian 3D Model Ultra Librarian RN1307,LF CAD Model

Description

The 801341-RN1307,LF is a high-frequency NPN transistor that is pre-biased from Toshiba Semiconductor and Storage.

  • Maximum Power: 100mW
  • Transition Frequency: 250MHz
  • Package: USM
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Cutoff Current: 500nA
  • Vce Saturation @ Ib, Ic: 300mV @ Ib, Ic
  • DC Current Gain (hFE) @ 10mA, 5V: 80 @ 10mA, 5V
  • Applications: RF amplifiers and oscillators

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480+ $0.6075 $291.6000
640+ $0.5440 $348.1600
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