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Same model may have multiple batches, images only for reference.
RN1423(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1423(TE85L,F)

Part No RN1423(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SMINI
Datasheet
RN1423(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 70 @ 100mA, 1V
Max Vce (sat) 250mV @ 1mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 300MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 042337-RN1423(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1423(TE85L,F) CAD Model

Description

The supply and demand status is balanced.

  • Type: NPN pre-biased transistor
  • Frequency - Transition: 300MHz
  • Current - Collector (Max): 800mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Power - Max: 200mW
  • Package: S-Mini
  • Mounting Type: SMD (SMT) technology
  • Typical Gain (hFE) (Min): 70 @ 100mA, 1V

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