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Same model may have multiple batches, images only for reference.
RN1510(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1510(TE85L,F)

Part No RN1510(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W SMV
Datasheet
RN1510(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMV
Win Source Part Number 103363-RN1510(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1510(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN1510(TE85L,F) is a dual NPN - pre-biased (dual) (emitter coupled) electronic component with a frequency - transition of 250MHz.

  • Resistor - Base (R1) (Ohms): 4.7k
  • Current - Collector (Max): 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Max Vce (sat): 300mV @ 250μA, 5mA
  • Package: SMV
  • Typical Gain (hFE) (min): 120 @ 1mA, 5V

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