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RN1610(TE85L,F)

Part No RN1610(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W SM6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SM6
Win Source Part Number 104145-RN1610(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1610(TE85L,F) CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and has a medium popularity in the market.

  • Popularity: Medium
  • Type: Dual NPN transistor
  • Transition Frequency: 250MHz
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Bias: Pre-biased
  • Typical Gain: 120 @ 1mA and 5V
  • Package: SM6
  • Maximum Power Dissipation: 300mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $14.0148 $70.0740
11+ $11.4992 $126.4912
16+ $11.1400 $178.2400
22+ $10.7808 $237.1776
28+ $10.4216 $291.8048
38+ $9.3440 $355.0720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,200 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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