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Same model may have multiple batches, images only for reference.
RN1417(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1417(TE85L,F)

Part No RN1417(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.2W S-MINI
Datasheet
RN1417(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 113687-RN1417(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1417(TE85L,F) CAD Model

Description

The RN1417(TE85L,F) is a NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage.

  • Frequency - Transition: 250MHz
  • Current - Collector (Max): 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-Off Current (Max): 500nA
  • Typical Gain (hFE) (Min): 30 @ 10mA, 5V
  • Power - Max: 200mW
  • Category: Discrete Semiconductor Products
  • Mounting Type: SMD (SMT)
  • Popularity: Medium

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