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Same model may have multiple batches, images only for reference.
RN1904FE,LF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1904FE,LF(CT

Part No RN1904FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.1W ES6
Datasheet
RN1904FE,LF(CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092476-RN1904FE,LF(CT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1904FE,LF(CT CAD Model

Description

The Toshiba Semiconductor and Storage RN1904FE,LF(CT) is a dual NPN pre-biased transistor.

  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Frequency Transition: 250MHz
  • Typical Gain: 80 @ 10mA and 5V
  • Maximum Power Dissipation: 100mW
  • Case/Package: ES6
  • Popularity: Medium

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Quantity Unit Price Ext. Price
55+ $1.0695 $58.8225
135+ $0.8778 $118.5030
205+ $0.8501 $174.2705
285+ $0.8224 $234.3840
365+ $0.7958 $290.4670
490+ $0.7126 $349.1740
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