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RN1961FE

Part No RN1961FE
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1243386-RN1961FE
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1961FE CAD Model

Description

The RN1961FE is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for high-speed switching and amplification applications. This transistor is commonly used in various electronic circuits where fast switching and moderate power handling are required.

Applications

  • High-Speed Switching Circuits: Used in high-speed switching applications such as inverters and converters.
  • Amplification Circuits: Employed as an amplifier in various electronic circuits.
  • Driver Circuits: Used as a driver for relays, LEDs, and other components.
  • Oscillator Circuits: Used in oscillator circuits for generating clock signals.
  • General Purpose Switching: Used in general-purpose switching applications.

Features

  • High Transition Frequency: Enables high-speed switching performance.
  • Low Saturation Voltage: Minimizes power dissipation and improves efficiency.
  • Small Package: Compact package allows for easy integration into space-constrained designs.
  • High Collector Current: Supports moderate current handling.
  • Lead-Free Finish: RoHS compliant, ensuring environmental friendliness.

Benefits

  • Fast Switching Speed: Enables efficient and rapid switching performance.
  • Low Power Dissipation: Minimizes power loss and improves overall efficiency.
  • Simplified Circuit Design: Easy to integrate into various circuit designs.
  • Cost-Effective Solution: Provides reliable switching and amplification at a competitive price.

Additional Details

The RN1961FE is typically available in a small SOT-346 package. It has a collector-emitter voltage (VCEO) of 50V and a collector current (IC) of 150mA. The transition frequency (fT) is typically around 200 MHz. Its low saturation voltage minimizes power dissipation when the transistor is in the ON state. The device is designed for surface mount assembly, facilitating automated manufacturing processes. Proper PCB layout is essential for optimal performance. Keep trace lengths short and minimize stray capacitance. It’s important to adhere to the maximum ratings specified in the datasheet to ensure reliable operation and prevent damage to the transistor. This transistor is commonly used in applications where a combination of high-speed switching and moderate power handling is required. The RN1961FE is a reliable and cost-effective solution for various switching and amplification applications.

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